منابع مشابه
Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds
Physical vapour transport growth of aluminium nitride (AlN) single crystals on silicon carbide (SiC) substrates has been optimised and crack-free, large-area, free-standing (0001) AlN wafers were prepared from the grown template crystals. 28 mm diameter single crystals without any polycrystalline surroundings were obtained. Different off-oriented substrates give rise to different growth modes. ...
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John B. Gruber, Ulrich Vetter, Takashi Taniguchi, Gary W. Burdick, Hans Hofsäss, Sreerenjini Chandra, and Dhiraj K. Sardar Department of Physics and Astronomy, The University of Texas at San Antonio, San Antonio, Texas 78249-0697, USA Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, Göttingen D-37077, Germany National Institute for Materials Science, Namiki 1...
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Single crystals consisting various surface morphologies and epitaxial structures were applied to investigate the effect of other phase regions in the vicinity of a given tethered chains-covered area having a certain molecular weight of amorphous brushes. The designed experiments demonstrated that regardless of the type of surface morphology (patterned and especial mixed-brushes, homo and co...
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Geometrical design of the spiral crystal selector can affect crystal orientation in the final single crystal structure. To achieve a better understanding of conditions associated with the onset of crystal orientation in a spiral crystal selector, temperature field was investigated using three-dimensional finite element method during the process. Different geometries of spiral crystal selec...
متن کاملSiC Bulk Single Crystal Growth
SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...
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ژورنال
عنوان ژورنال: IOP Conference Series: Earth and Environmental Science
سال: 2019
ISSN: 1755-1315
DOI: 10.1088/1755-1315/234/1/012028